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mtd: nand: erase block before marking bad

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Many NAND flash systems (especially those with MLC NAND) cannot be
reliably written twice in a row. For instance, when marking a bad block,
the block may already have data written to it, and so we should attempt
to erase the block before writing a bad block marker to its OOB region.

We can ignore erase failures, since the block may be bad such that it
cannot be erased properly; we still attempt to write zeros to its spare
area.

Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This commit is contained in:
Brian Norris 2012-01-13 18:11:47 -08:00 committed by David Woodhouse
parent 152b861622
commit 009184296d
1 changed files with 11 additions and 0 deletions
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11
drivers/mtd/nand/nand_base.c
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@ -394,6 +394,17 @@ static int nand_default_block_markbad(struct mtd_info *mtd, loff_t ofs)
uint8_t buf[2] = { 0, 0 }; uint8_t buf[2] = { 0, 0 };
int block, ret, i = 0; int block, ret, i = 0;
if (!(chip->bbt_options & NAND_BBT_USE_FLASH)) {
struct erase_info einfo;
/* Attempt erase before marking OOB */
memset(&einfo, 0, sizeof(einfo));
einfo.mtd = mtd;
einfo.addr = ofs;
einfo.len = 1 << chip->phys_erase_shift;
nand_erase_nand(mtd, &einfo, 0);
}
if (chip->bbt_options & NAND_BBT_SCANLASTPAGE) if (chip->bbt_options & NAND_BBT_SCANLASTPAGE)
ofs += mtd->erasesize - mtd->writesize; ofs += mtd->erasesize - mtd->writesize;