mtd: nand: pxa3xx: Add bad block handling

Add support for flash-based bad block table using Marvell's
custom in-flash bad block table layout. The support is enabled
a 'flash_bbt' platform data or device tree parameter.

Signed-off-by: Ezequiel Garcia <ezequiel.garcia@free-electrons.com>
Tested-by: Daniel Mack <zonque@gmail.com>
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
This commit is contained in:
Ezequiel Garcia 2013-11-14 18:25:28 -03:00 committed by Brian Norris
parent 56704d857a
commit 776f265e27
3 changed files with 42 additions and 0 deletions

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@ -15,6 +15,8 @@ Optional properties:
- marvell,nand-keep-config: Set to keep the NAND controller config as set
by the bootloader
- num-cs: Number of chipselect lines to usw
- nand-on-flash-bbt: boolean to enable on flash bbt option if
not present false
Example:

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@ -26,6 +26,7 @@
#include <linux/slab.h>
#include <linux/of.h>
#include <linux/of_device.h>
#include <linux/of_mtd.h>
#if defined(CONFIG_ARCH_PXA) || defined(CONFIG_ARCH_MMP)
#define ARCH_HAS_DMA
@ -241,6 +242,29 @@ static struct pxa3xx_nand_flash builtin_flash_types[] = {
{ "256MiB 16-bit", 0xba20, 64, 2048, 16, 16, 2048, &timing[3] },
};
static u8 bbt_pattern[] = {'M', 'V', 'B', 'b', 't', '0' };
static u8 bbt_mirror_pattern[] = {'1', 't', 'b', 'B', 'V', 'M' };
static struct nand_bbt_descr bbt_main_descr = {
.options = NAND_BBT_LASTBLOCK | NAND_BBT_CREATE | NAND_BBT_WRITE
| NAND_BBT_2BIT | NAND_BBT_VERSION,
.offs = 8,
.len = 6,
.veroffs = 14,
.maxblocks = 8, /* Last 8 blocks in each chip */
.pattern = bbt_pattern
};
static struct nand_bbt_descr bbt_mirror_descr = {
.options = NAND_BBT_LASTBLOCK | NAND_BBT_CREATE | NAND_BBT_WRITE
| NAND_BBT_2BIT | NAND_BBT_VERSION,
.offs = 8,
.len = 6,
.veroffs = 14,
.maxblocks = 8, /* Last 8 blocks in each chip */
.pattern = bbt_mirror_pattern
};
/* Define a default flash type setting serve as flash detecting only */
#define DEFAULT_FLASH_TYPE (&builtin_flash_types[0])
@ -1122,6 +1146,18 @@ static int pxa3xx_nand_scan(struct mtd_info *mtd)
if (nand_scan_ident(mtd, 1, def))
return -ENODEV;
if (pdata->flash_bbt) {
/*
* We'll use a bad block table stored in-flash and don't
* allow writing the bad block marker to the flash.
*/
chip->bbt_options |= NAND_BBT_USE_FLASH |
NAND_BBT_NO_OOB_BBM;
chip->bbt_td = &bbt_main_descr;
chip->bbt_md = &bbt_mirror_descr;
}
/* calculate addressing information */
if (mtd->writesize >= 2048)
host->col_addr_cycles = 2;
@ -1316,6 +1352,7 @@ static int pxa3xx_nand_probe_dt(struct platform_device *pdev)
if (of_get_property(np, "marvell,nand-keep-config", NULL))
pdata->keep_config = 1;
of_property_read_u32(np, "num-cs", &pdata->num_cs);
pdata->flash_bbt = of_get_nand_on_flash_bbt(np);
pdev->dev.platform_data = pdata;

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@ -55,6 +55,9 @@ struct pxa3xx_nand_platform_data {
/* indicate how many chip selects will be used */
int num_cs;
/* use an flash-based bad block table */
bool flash_bbt;
const struct mtd_partition *parts[NUM_CHIP_SELECT];
unsigned int nr_parts[NUM_CHIP_SELECT];